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| LESHAN RADIO COMPANY, LTD. High Voltage Silicon Pin Diode These devices are designed primarily for VHF band switching applications but are also suitable for use in general-purpose switching circuits. They are supplied in a cost-effective plastic surface mount package for economical, high-volume consumer and industrial requirements. * Long Reverse Recovery Time trr = 300 ns (Typ) * Rugged PIN Structure Coupled with Wirebond Construction for Optimum Reliability * Low Series Resistance @ 100 MHz - RS = 0.7 (Typ) @ IF = 10 mAdc * Reverse Breakdown Voltage = 200 V (Min) * Device Marking: 4R MMVL3700T1 SILICON PIN SWITCHING DIODE 1 2 PLASTIC, CASE 477 SOD- 323 ORDERING INFORMATION Device MMVL3700T1 Package SOD-323 Shipping 3000 / Tape & Reel 1 CATHODE 2 ANODE MAXIMUM RATINGS Symbol VR IF Symbol PD Rating Continuous Reverse Voltage Peak Forward Current Characteristic Total Device Dissipation FR-5 Board,* TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Value 200 20 Max 200 1.57 635 150 Unit Vdc mAdc Unit mW mW/C C/W C THERMAL CHARACTERISTICS RJA TJ, Tstg *FR-4 Minimum Pad ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Reverse BreakdownVoltage (I R = 10 Adc) Diode Capacitance (VR = 20 Vdc, f = 1.0 MHz) Series Resistance (IF = 10 mAdc) Reverse Leakage Current (VR = 150 Vdc) Reverse Recovery Time (IF = IR = 10 mAdc) Symbol V(BR)R CT RS IR trr Min 200 -- -- -- -- Typ -- -- 0.7 -- 300 Max -- 1.0 1.0 0.1 -- Unit Vdc pF Adc ns MMVL3700T1-1/2 LESHAN RADIO COMPANY, LTD. MMVL3700T1 TYPICAL CHARACTERISTICS I F , FORWARD CURRENT (mA) RS, SERIES RESISTANCE () I F, FORWARD CURRENT (mA) VF, FORWARD VOLTAGE (VOLTS) Figure 1. Series Resistance Figure 2. Forward Voltage CT, DIODE CAPACITANCE (pF) I R, REVERSE CURRENT ( A) VR, REVERSE VOLTAGE (VOLTS) TA, AMBIENT TEMPERATURE (C) Figure 3. Diode Capacitance Figure 4. Leakage Current MMVL3700T1-2/2 |
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